MMBTA63

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Mfr.Part #
MMBTA63
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP DARL 30V 1.2A SOT23-3
Stock
927
In Stock :
927

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Length :
3.05mm
hFE Min :
5000
Radiation Hardening :
No
Element Configuration :
Single
Frequency - Transition :
125MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Emitter Base Voltage (VEBO) :
10V
Terminal Finish :
Matte Tin (Sn)
Terminal Position :
Dual
Mounting Type :
Surface Mount
Factory Lead Time :
19 Weeks
Number of Terminations :
3
Base Part Number :
MMBTA63
Collector Base Voltage (VCBO) :
30V
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Terminal Form :
Gull wing
Pin Count :
3
Max Collector Current :
500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Current Rating :
-500mA
Collector Emitter Saturation Voltage :
1.5V
Voltage - Rated DC :
-30V
Collector Emitter Breakdown Voltage :
30V
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Weight :
7.994566mg
Transistor Element Material :
SILICON
Width :
1.4mm
Collector Emitter Voltage (VCEO) :
30V
Polarity :
PNP
ECCN Code :
EAR99
Power - Max :
300mW
Max Power Dissipation :
300mW
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
40
Height :
1mm
Transition Frequency :
125MHz
Lead Free :
Lead Free
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Max Breakdown Voltage :
30V
Transistor Type :
PNP - Darlington
Mount :
Surface Mount
Series :
Automotive, AEC-Q101
Number of Elements :
1
Published :
2008
Datasheets
MMBTA63
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA63 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Base Part Number:MMBTA63, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, MMBTA63 pinout, MMBTA63 datasheet PDF, MMBTA63 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA63 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA63


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA63-7-F Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.

MMBTA63-7-F Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MMBTA63-7-F Applications


There are a lot of Diodes Incorporated
MMBTA63-7-F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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