MMBTA63
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- Mfr.Part #
- MMBTA63
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 1.2A SOT23-3
- Stock
- 927
- In Stock ：
- 927
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Power - Max :
- 300mW
- Number of Pins :
- 3
- Transition Frequency :
- 125MHz
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Current Rating :
- -500mA
- Max Power Dissipation :
- 300mW
- Height :
- 1mm
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- hFE Min :
- 5000
- Collector Emitter Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Published :
- 2008
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 30V
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Weight :
- 7.994566mg
- Base Part Number :
- MMBTA63
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Type :
- PNP - Darlington
- Series :
- Automotive, AEC-Q101
- Polarity :
- PNP
- Length :
- 3.05mm
- Emitter Base Voltage (VEBO) :
- 10V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Voltage - Rated DC :
- -30V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 19 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Frequency - Transition :
- 125MHz
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- MMBTA63
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA63-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63-7-F Applications
There are a lot of Diodes Incorporated
MMBTA63-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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