MMBTA63-7
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- Mfr.Part #
- MMBTA63-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A SOT23-3
- Stock
- 6
- In Stock ：
- 6
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- Voltage - Rated DC :
- -30V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2008
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 3
- Transition Frequency :
- 125MHz
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- 10V
- Polarity :
- PNP
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- PNP - Darlington
- Mount :
- Surface Mount
- Power - Max :
- 300mW
- Current Rating :
- -500mA
- hFE Min :
- 5000
- Frequency - Transition :
- 125MHz
- Length :
- 3.05mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Emitter Saturation Voltage :
- 1.5V
- Base Part Number :
- MMBTA63
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- JESD-609 Code :
- e3
- Height :
- 1mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 19 Weeks
- Max Power Dissipation :
- 300mW
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Datasheets
- MMBTA63-7
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA63-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 125MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA63-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MMBTA63-7-F Applications
There are a lot of Diodes Incorporated
MMBTA63-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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