MMBTA56Q-7-F
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- Mfr.Part #
- MMBTA56Q-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 2,070
- In Stock ：
- 2,070
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-G3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Power - Max :
- 350mW
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 250mV
- Max Power Dissipation :
- 350mW
- Factory Lead Time :
- 19 Weeks
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Configuration :
- Single
- Number of Elements :
- 1
- Frequency - Transition :
- 50MHz
- Transistor Element Material :
- SILICON
- Datasheets
- MMBTA56Q-7-F
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA56Q-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The part has a transition frequency of 50MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA56Q-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
a transition frequency of 50MHz
MMBTA56Q-7-F Applications
There are a lot of Diodes Incorporated
MMBTA56Q-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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