MMBTA56LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

ECCN Code :

EAR99

Length :

3.0226mm

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

-80V

Pin Count :

3

Terminal Form :

Gull wing

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Max Power Dissipation :

225mW

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MMBTA56

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

100

Emitter Base Voltage (VEBO) :

4V

Published :

2006

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Power - Max :

225mW

Terminal Position :

Dual

Height :

1.016mm

Voltage - Rated DC :

-80V

Peak Reflow Temperature (Cel) :

260

Current Rating :

-500mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Breakdown Voltage :

80V

Transistor Type :

PNP

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

AMPLIFIER

Transition Frequency :

50MHz

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

80V

Surface Mount :

yes

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

50MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Power Dissipation :

300mW

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Max Collector Current :

500mA

Width :

1.397mm

Frequency :

50MHz

Number of Pins :

3

Collector Emitter Saturation Voltage :

-250mV

Number of Terminations :

3