MMBTA56LT1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Gain Bandwidth Product :

50MHz

hFE Min :

100

Terminal Position :

Dual

JESD-609 Code :

e3

Pin Count :

3

Transistor Type :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Power Dissipation :

300mW

Height :

1.016mm

Collector Emitter Breakdown Voltage :

-80V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

4V

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Contact Plating :

Tin

Width :

1.397mm

Max Breakdown Voltage :

80V

Published :

2006

Frequency :

50MHz

Transition Frequency :

50MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

80V

Max Power Dissipation :

225mW

Voltage - Rated DC :

-80V

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

500mA

Length :

3.0226mm

Current Rating :

-500mA

Base Part Number :

MMBTA56

Number of Terminations :

3

Number of Elements :

1

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

-250mV

Polarity/Channel Type :

PNP

REACH SVHC :

No SVHC

Power - Max :

225mW

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Collector Emitter Voltage (VCEO) :

80V

Radiation Hardening :

No