MMBTA55LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

1.4mm

Max Collector Current :

500mA

Transistor Type :

PNP

Max Breakdown Voltage :

60V

Voltage - Rated DC :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

60V

Lead Free :

Lead Free

Number of Pins :

3

Length :

3.04mm

Power - Max :

225mW

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

4V

Max Power Dissipation :

225mW

Type :

GENERAL PURPOSE

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Frequency :

50MHz

ECCN Code :

EAR99

Published :

2005

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current Rating :

-500mA

Factory Lead Time :

4 Weeks

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

100nA

Gain Bandwidth Product :

50MHz

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Height :

1.01mm

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

hFE Min :

100

Transistor Element Material :

SILICON

Number of Terminations :

3

JESD-609 Code :

e3

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Collector Base Voltage (VCBO) :

60V

Base Part Number :

MMBTA55

Collector Emitter Saturation Voltage :

-250mV

Element Configuration :

Single

Transition Frequency :

50MHz

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

REACH SVHC :

No SVHC

Pin Count :

3

Contact Plating :

Tin

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant