MMBTA55-7-F
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- Mfr.Part #
- MMBTA55-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 56,688
- In Stock ：
- 56,688
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -60V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MMBTA55
- JESD-609 Code :
- e3
- Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Published :
- 2008
- Emitter Base Voltage (VEBO) :
- -4V
- Collector Emitter Saturation Voltage :
- -250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Continuous Collector Current :
- -500mA
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- Length :
- 3.05mm
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 300mW
- Frequency :
- 50MHz
- Current Rating :
- -100mA
- Factory Lead Time :
- 19 Weeks
- Gain Bandwidth Product :
- 50MHz
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Width :
- 1.4mm
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Datasheets
- MMBTA55-7-F
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA55-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA55-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -100mA
a transition frequency of 50MHz
MMBTA55-7-F Applications
There are a lot of Diodes Incorporated
MMBTA55-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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