MMBTA43LT1

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Mfr.Part #
MMBTA43LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 200V 0.05A SOT23-3
Stock
4,253
In Stock :
4,253

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Package / Case :
TO-236-3, SC-59, SOT-23-3
Element Configuration :
Single
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Current - Collector (Ic) (Max) :
50mA
Lead Free :
Contains Lead
Pbfree Code :
No
Pin Count :
3
Gain Bandwidth Product :
50MHz
Transition Frequency :
50MHz
Qualification Status :
Not Qualified
Collector Emitter Voltage (VCEO) :
200V
JESD-609 Code :
e0
Collector Emitter Breakdown Voltage :
200V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
30
Collector Base Voltage (VCBO) :
200V
Transistor Type :
NPN
Voltage - Rated DC :
200V
Current - Collector Cutoff (Max) :
100nA ICBO
Max Collector Current :
50mA
Current Rating :
500mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Number of Terminations :
3
Mount :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
Non-RoHS Compliant
Terminal Position :
Dual
Terminal Finish :
Tin/Lead (Sn/Pb)
Max Power Dissipation :
225mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 30mA 10V
Emitter Base Voltage (VEBO) :
6V
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
HTS Code :
8541.21.00.95
Collector Emitter Saturation Voltage :
500mV
Reach Compliance Code :
not_compliant
Published :
2001
hFE Min :
25
Peak Reflow Temperature (Cel) :
240
Datasheets
MMBTA43LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA43LT1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, MMBTA43LT1 pinout, MMBTA43LT1 datasheet PDF, MMBTA43LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA43LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA43LT1


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA43LT1 Overview


In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 50mA volts.

MMBTA43LT1 Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


MMBTA43LT1 Applications


There are a lot of ON Semiconductor
MMBTA43LT1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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