MMBTA43LT1
- Mfr.Part #
- MMBTA43LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.05A SOT23-3
- Stock
- 4,253
- In Stock :
- 4,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Current - Collector (Ic) (Max) :
- 50mA
- Lead Free :
- Contains Lead
- Pbfree Code :
- No
- Pin Count :
- 3
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Qualification Status :
- Not Qualified
- Collector Emitter Voltage (VCEO) :
- 200V
- JESD-609 Code :
- e0
- Collector Emitter Breakdown Voltage :
- 200V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 200V
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 200V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 50mA
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- Dual
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.95
- Collector Emitter Saturation Voltage :
- 500mV
- Reach Compliance Code :
- not_compliant
- Published :
- 2001
- hFE Min :
- 25
- Peak Reflow Temperature (Cel) :
- 240
- Datasheets
- MMBTA43LT1

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA43LT1 Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 50mA volts.
MMBTA43LT1 Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA43LT1 Applications
There are a lot of ON Semiconductor
MMBTA43LT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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