MMBTA42LT3G
- Mfr.Part #
- MMBTA42LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 33,056
- In Stock :
- 33,056
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 300V
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 300V
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 225mW
- Number of Terminations :
- 3
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 10 hours ago)
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 300V
- Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Transition Frequency :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2008
- Voltage - Rated DC :
- 300V
- Frequency :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- hFE Min :
- 25
- Base Part Number :
- MMBTA42
- Collector Emitter Voltage (VCEO) :
- 300V
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Element Configuration :
- Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBTA42LT3G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42LT3G Overview
DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.
MMBTA42LT3G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MMBTA42LT3G Applications
There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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