MMBTA42LT3G

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Mfr.Part #
MMBTA42LT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 300V 0.5A SOT23-3
Stock
33,056
In Stock :
33,056

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-236-3, SC-59, SOT-23-3
RoHS Status :
ROHS3 Compliant
Max Breakdown Voltage :
300V
Factory Lead Time :
8 Weeks
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
300V
Emitter Base Voltage (VEBO) :
6V
Max Power Dissipation :
225mW
Number of Terminations :
3
Pin Count :
3
Lifecycle Status :
ACTIVE (Last Updated: 10 hours ago)
Pbfree Code :
yes
Terminal Position :
Dual
Operating Temperature :
-55°C~150°C TJ
Max Collector Current :
500mA
Collector Emitter Breakdown Voltage :
300V
Power Dissipation :
300mW
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Lead Free :
Lead Free
Transition Frequency :
50MHz
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
500mV @ 2mA, 20mA
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100nA ICBO
Published :
2008
Voltage - Rated DC :
300V
Frequency :
50MHz
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 30mA 10V
Surface Mount :
yes
Transistor Type :
NPN
Number of Pins :
3
JESD-609 Code :
e3
hFE Min :
25
Base Part Number :
MMBTA42
Collector Emitter Voltage (VCEO) :
300V
Transistor Element Material :
SILICON
Current Rating :
500mA
Element Configuration :
Single
Number of Elements :
1
Collector Emitter Saturation Voltage :
500mV
Polarity/Channel Type :
NPN
Datasheets
MMBTA42LT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA42LT3G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Base Part Number:MMBTA42, MMBTA42LT3G pinout, MMBTA42LT3G datasheet PDF, MMBTA42LT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA42LT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA42LT3G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA42LT3G Overview


DC current gain in this device equals 40 @ 30mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 500mA volts.

MMBTA42LT3G Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz


MMBTA42LT3G Applications


There are a lot of ON Semiconductor
MMBTA42LT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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