MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23
- Stock
- 41,001
- In Stock ：
- 41,001
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 25
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- Published :
- 2008
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Polarity/Channel Type :
- NPN
- Height :
- 1.1mm
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Termination :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 19 Weeks
- Base Part Number :
- MMBTA42
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 300V
- Additional Feature :
- High Reliability
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 50MHz
- Max Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Continuous Collector Current :
- 500mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 300V
- Length :
- 3.05mm
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Junction Temperature (Tj) :
- 150°C
- Transition Frequency :
- 50MHz
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 200mA
- Max Power Dissipation :
- 300mW
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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