MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- MDD
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23
- Stock
- 41,001
- In Stock ：
- 41,001
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- Manufacturer :
- MDD
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 25
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 300V
- Voltage - Rated DC :
- 300V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Pin Count :
- 3
- Width :
- 1.4mm
- Terminal Finish :
- Matte Tin (Sn)
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Height :
- 1.1mm
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 300V
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Weight :
- 7.994566mg
- Current Rating :
- 200mA
- Max Junction Temperature (Tj) :
- 150°C
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Base Part Number :
- MMBTA42
- Collector Emitter Breakdown Voltage :
- 300V
- Continuous Collector Current :
- 500mA
- Max Power Dissipation :
- 300mW
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Mounting Type :
- Surface Mount
- Frequency :
- 50MHz
- Transition Frequency :
- 50MHz
- Length :
- 3.05mm
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Additional Feature :
- High Reliability
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Published :
- 2008
- Max Breakdown Voltage :
- 300V
- Factory Lead Time :
- 19 Weeks
- Transistor Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 50MHz
- JESD-609 Code :
- e3
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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