MMBTA42
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- Mfr.Part #
- MMBTA42
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 34,121
- In Stock ：
- 34,121
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Continuous Collector Current :
- 500mA
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 50MHz
- Element Configuration :
- Single
- hFE Min :
- 25
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transition Frequency :
- 50MHz
- Height :
- 1.1mm
- Terminal Form :
- Gull wing
- Current Rating :
- 200mA
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Published :
- 2008
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 300V
- Pin Count :
- 3
- Factory Lead Time :
- 19 Weeks
- Transistor Type :
- NPN
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Base Part Number :
- MMBTA42
- Transistor Application :
- SWITCHING
- Additional Feature :
- High Reliability
- Collector Base Voltage (VCBO) :
- 300V
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Series :
- Automotive, AEC-Q101
- Termination :
- SMD/SMT
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- Dual
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 3.05mm
- Datasheets
- MMBTA42
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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