MMBTA42-7
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- Mfr.Part #
- MMBTA42-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A SOT23-3
- Stock
- 6,815
- In Stock ：
- 6,815
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Number of Pins :
- 3
- Factory Lead Time :
- 19 Weeks
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Height :
- 1.1mm
- Length :
- 3.05mm
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 300V
- Published :
- 2008
- JESD-609 Code :
- e3
- Base Part Number :
- MMBTA42
- Max Breakdown Voltage :
- 300V
- Current Rating :
- 200mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 300V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Breakdown Voltage :
- 300V
- Continuous Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Finish :
- Matte Tin (Sn)
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Weight :
- 7.994566mg
- Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 300V
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 25
- Gain Bandwidth Product :
- 50MHz
- Transition Frequency :
- 50MHz
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Datasheets
- MMBTA42-7
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA42-7-F Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBTA42-7-F Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 50MHz
MMBTA42-7-F Applications
There are a lot of Diodes Incorporated
MMBTA42-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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