MMBTA28-7
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- Mfr.Part #
- MMBTA28-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.5A SOT23-3
- Stock
- 2,077
- In Stock ：
- 2,077
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMBTA28
- Terminal Form :
- Gull wing
- Max Collector Current :
- 500mA
- Height :
- 1.1mm
- Contact Plating :
- Tin
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Gain Bandwidth Product :
- 125MHz
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 1.5V
- Number of Pins :
- 3
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Length :
- 3.05mm
- Transistor Application :
- SWITCHING
- Width :
- 1.4mm
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Published :
- 2008
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 500nA
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 10000
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 12V
- Transition Frequency :
- 125MHz
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Polarity :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Max Breakdown Voltage :
- 80V
- Datasheets
- MMBTA28-7
NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA28-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 125MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MMBTA28-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
MMBTA28-7-F Applications
There are a lot of Diodes Incorporated
MMBTA28-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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