MMBTA14LT1HTSA1
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- Mfr.Part #
- MMBTA14LT1HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23
- Stock
- 19,057
- In Stock ：
- 19,057
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Power - Max :
- 330mW
- Voltage - Rated DC :
- 30V
- Max Power Dissipation :
- 330mW
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -65°C
- Max Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.5V
- Element Configuration :
- Single
- Supplier Device Package :
- SOT-23-3
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Current Rating :
- 300mA
- Emitter Base Voltage (VEBO) :
- 10V
- Base Part Number :
- MMBTA
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 300mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN - Darlington
- Frequency - Transition :
- 125MHz
- Published :
- 2007
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Current - Collector (Ic) (Max) :
- 300mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Factory Lead Time :
- 26 Weeks
- Polarity :
- NPN
- Datasheets
- MMBTA14LT1HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA14LT1HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 30V volts.SOT-23-3 is the supplier device package for this product.This device displays a 30V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 300mA volts.
MMBTA14LT1HTSA1 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
the supplier device package of SOT-23-3
MMBTA14LT1HTSA1 Applications
There are a lot of Infineon Technologies
MMBTA14LT1HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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