MMBTA14LT1

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Mfr.Part #
MMBTA14LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS SS DARL NPN 30V SOT23
Stock
22,750
In Stock :
22,750

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
11 Weeks
Lead Free :
Lead Free
Surface Mount :
yes
Terminal Form :
Gull wing
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Weight :
1.437803g
Number of Pins :
3
REACH SVHC :
No SVHC
Max Power Dissipation :
225mW
Polarity :
NPN
hFE Min :
10000
Collector Emitter Voltage (VCEO) :
30V
Mounting Type :
Surface Mount
Max Collector Current :
300mA
Number of Terminations :
3
Halogen Free :
Halogen Free
Current - Collector Cutoff (Max) :
100nA ICBO
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Transistor Element Material :
SILICON
Collector Emitter Saturation Voltage :
1.5V
Pbfree Code :
yes
ECCN Code :
EAR99
Pin Count :
3
Power Dissipation :
300mW
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
30V
Current Rating :
300mA
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
30V
Voltage - Rated DC :
30V
Published :
2006
Transistor Application :
AMPLIFIER
Continuous Collector Current :
300mA
Height :
940μm
JESD-609 Code :
e3
Contact Plating :
Tin
Width :
1.3mm
Terminal Position :
Dual
Max Breakdown Voltage :
30V
Length :
2.9mm
Transistor Type :
NPN - Darlington
Transition Frequency :
125MHz
Frequency - Transition :
125MHz
Package / Case :
TO-236-3, SC-59, SOT-23-3
Base Part Number :
MMBTA14
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Emitter Base Voltage (VEBO) :
10V
Datasheets
MMBTA14LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBTA14LT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:MMBTA14, MMBTA14LT1 pinout, MMBTA14LT1 datasheet PDF, MMBTA14LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBTA14LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBTA14LT1


NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBTA14LT1G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of 300mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 300mA volts.

MMBTA14LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz


MMBTA14LT1G Applications


There are a lot of ON Semiconductor
MMBTA14LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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