MMBTA13LT1G
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- Mfr.Part #
- MMBTA13LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 0.3A SOT23-3
- Stock
- 73,757
- In Stock ：
- 73,757
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Max Power Dissipation :
- 225mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 1997
- Base Part Number :
- MMBTA13
- Pin Count :
- 3
- Length :
- 2.9mm
- Power Dissipation :
- 225mW
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 10V
- Transistor Type :
- NPN - Darlington
- Weight :
- 1.437803g
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 11 Weeks
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Collector Current :
- 300mA
- Max Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Collector Emitter Breakdown Voltage :
- 30V
- hFE Min :
- 5000
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Frequency - Transition :
- 125MHz
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.5V
- Height :
- 940μm
- Width :
- 1.3mm
- Terminal Position :
- Dual
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 300mA
- Current Rating :
- 300mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 125MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MMBTA13LT1G
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA13LT1G Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.5V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 300mA to achieve high efficiency.An emitter's base voltage can be kept at 10V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.As a result, the part has a transition frequency of 125MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 300mA volts.
MMBTA13LT1G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMBTA13LT1G Applications
There are a lot of ON Semiconductor
MMBTA13LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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