MMBTA13LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

940μm

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

125MHz

Collector Emitter Voltage (VCEO) :

30V

Number of Elements :

1

Length :

2.9mm

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Weight :

1.437803g

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Published :

1997

Halogen Free :

Halogen Free

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Frequency - Transition :

125MHz

Collector Emitter Breakdown Voltage :

30V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

30V

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Factory Lead Time :

11 Weeks

Power Dissipation :

225mW

Current Rating :

300mA

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

10V

Terminal Form :

Gull wing

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN - Darlington

hFE Min :

5000

Max Breakdown Voltage :

30V

Pin Count :

3

Max Collector Current :

300mA

Width :

1.3mm

Element Configuration :

Single

Max Power Dissipation :

225mW

Base Part Number :

MMBTA13

Number of Terminations :

3

Continuous Collector Current :

300mA

REACH SVHC :

No SVHC

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN

Surface Mount :

yes

Collector Emitter Saturation Voltage :

1.5V

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin