MMBTA13
- Mfr.Part #
- MMBTA13
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 30V 1.2A SOT23-3
- Stock
- 11,594
- In Stock :
- 11,594
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 1.2A
- Voltage - Rated DC :
- 30V
- Current - Collector (Ic) (Max) :
- 1.2A
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Base Part Number :
- MMBTA13
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Frequency - Transition :
- 125MHz
- Power - Max :
- 350mW
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1.2A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Width :
- 1.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 10000
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Weight :
- 30mg
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Power Dissipation :
- 350mW
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 930μm
- Polarity :
- NPN
- Power Dissipation :
- 350mW
- Factory Lead Time :
- 39 Weeks
- Length :
- 2.92mm
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 10V
- Collector Emitter Saturation Voltage :
- 1.5V
- Collector Emitter Breakdown Voltage :
- 30V
- Max Breakdown Voltage :
- 30V
- Supplier Device Package :
- SOT-23-3
- Published :
- 2005
- Datasheets
- MMBTA13

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10000 @ 100mA 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor can be broken down at a voltage of 30V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 30V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1.2A volts.
MMBTA13 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3
MMBTA13 Applications
There are a lot of ON Semiconductor
MMBTA13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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