MMBTA06WT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

4V

Radiation Hardening :

No

Length :

6.35mm

Max Collector Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Collector Emitter Breakdown Voltage :

80V

Factory Lead Time :

6 Weeks

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Published :

2005

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Voltage - Rated DC :

80V

Lead Free :

Lead Free

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

80V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Package / Case :

SC-70, SOT-323

hFE Min :

100

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Current - Collector Cutoff (Max) :

100nA

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Current Rating :

500mA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

150mW

Width :

6.35mm

Height :

6.35mm

Pin Count :

3

Transistor Type :

NPN

Number of Pins :

3

Collector Emitter Saturation Voltage :

250mV

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

80V

Weight :

4.535924g

Base Part Number :

MMBTA06

Frequency :

100MHz

Mounting Type :

Surface Mount

Max Power Dissipation :

150mW

ECCN Code :

EAR99

Gain Bandwidth Product :

100MHz

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Surface Mount :

yes