MMBTA06WT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

Transistor Element Material :

SILICON

Pin Count :

3

Gain Bandwidth Product :

100MHz

Width :

6.35mm

Transition Frequency :

100MHz

Collector Emitter Saturation Voltage :

250mV

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Emitter Base Voltage (VEBO) :

4V

Time@Peak Reflow Temperature-Max (s) :

40

Frequency :

100MHz

Peak Reflow Temperature (Cel) :

260

Current Rating :

500mA

Packaging :

Tape and Reel (TR)

Max Collector Current :

500mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Published :

2005

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Surface Mount :

yes

Element Configuration :

Single

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Length :

6.35mm

Radiation Hardening :

No

Base Part Number :

MMBTA06

Collector Base Voltage (VCBO) :

80V

Max Power Dissipation :

150mW

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Current - Collector Cutoff (Max) :

100nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Height :

6.35mm

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

hFE Min :

100

Collector Emitter Voltage (VCEO) :

80V

Weight :

4.535924g

Max Breakdown Voltage :

80V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Package / Case :

SC-70, SOT-323

Terminal Position :

Dual

JESD-609 Code :

e3

Voltage - Rated DC :

80V

Number of Pins :

3

Terminal Form :

Gull wing

Power Dissipation :

150mW