MMBTA06LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Width :

2.64mm

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

80V

Terminal Position :

Dual

Published :

2007

Number of Terminations :

3

Length :

3.04mm

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Number of Pins :

3

Transistor Application :

AMPLIFIER

Transition Frequency :

100MHz

Emitter Base Voltage (VEBO) :

4V

ECCN Code :

EAR99

hFE Min :

100

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Power Dissipation :

300mW

Max Collector Current :

500mA

Max Power Dissipation :

225mW

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

80V

Base Part Number :

MMBTA06

Height :

1.11mm

Collector Emitter Saturation Voltage :

250mV

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Max Breakdown Voltage :

80V

Voltage - Rated DC :

80V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Pbfree Code :

yes

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current Rating :

500mA

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Surface Mount :

yes

Type :

GENERAL PURPOSE