MMBTA06LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

4 Weeks

Pin Count :

3

Packaging :

Tape and Reel (TR)

Published :

2007

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

4V

Transistor Type :

NPN

Transistor Application :

AMPLIFIER

Base Part Number :

MMBTA06

JESD-609 Code :

e3

Radiation Hardening :

No

Terminal Position :

Dual

Surface Mount :

yes

Collector Emitter Saturation Voltage :

250mV

Voltage - Rated DC :

80V

Gain Bandwidth Product :

100MHz

Mounting Type :

Surface Mount

Max Breakdown Voltage :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

80V

Number of Terminations :

3

Number of Pins :

3

Max Collector Current :

500mA

Length :

3.04mm

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Breakdown Voltage :

80V

Number of Elements :

1

Type :

GENERAL PURPOSE

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Frequency :

100MHz

Transition Frequency :

100MHz

Power Dissipation :

300mW

Current Rating :

500mA

Current - Collector Cutoff (Max) :

100nA

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

80V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

hFE Min :

100

Width :

2.64mm

Lead Free :

Lead Free

Max Power Dissipation :

225mW

REACH SVHC :

No SVHC

Height :

1.11mm

Transistor Element Material :

SILICON