MMBTA06
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- Mfr.Part #
- MMBTA06
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 2,815
- In Stock ：
- 2,815
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- Height :
- 1.1mm
- Pin Count :
- 3
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Collector Emitter Breakdown Voltage :
- 80V
- Voltage - Rated DC :
- 80V
- ECCN Code :
- EAR99
- Current Rating :
- 500mA
- Weight :
- 7.994566mg
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- Element Configuration :
- Single
- Transition Frequency :
- 100MHz
- Length :
- 3.05mm
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Base Part Number :
- MMBTA06
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Frequency :
- 100MHz
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Continuous Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Max Junction Temperature (Tj) :
- 150°C
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101
- Width :
- 1.4mm
- Additional Feature :
- High Reliability
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Saturation Voltage :
- 250mV
- Power Dissipation :
- 310mW
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Datasheets
- MMBTA06
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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