MMBTA06
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- Mfr.Part #
- MMBTA06
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 8,725
- In Stock ：
- 8,725
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MMBTA06
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 4V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 80V
- REACH SVHC :
- No SVHC
- Length :
- 3.05mm
- Termination :
- SMD/SMT
- Number of Pins :
- 3
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 80V
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 15 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Current Rating :
- 500mA
- Power Dissipation :
- 310mW
- Height :
- 1.1mm
- Continuous Collector Current :
- 500mA
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Lead Free :
- Lead Free
- Width :
- 1.4mm
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Max Junction Temperature (Tj) :
- 150°C
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 100
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 500mA
- Weight :
- 7.994566mg
- Collector Emitter Saturation Voltage :
- 250mV
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Datasheets
- MMBTA06
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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