MMBTA06
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- Mfr.Part #
- MMBTA06
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 8,725
- In Stock ：
- 8,725
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 4V
- Terminal Position :
- Dual
- Continuous Collector Current :
- 500mA
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Termination :
- SMD/SMT
- Collector Emitter Breakdown Voltage :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Length :
- 3.05mm
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Pin Count :
- 3
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 7.994566mg
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 310mW
- Collector Emitter Saturation Voltage :
- 250mV
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 100
- Contact Plating :
- Tin
- Max Power Dissipation :
- 300mW
- Base Part Number :
- MMBTA06
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Current Rating :
- 500mA
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Additional Feature :
- High Reliability
- Published :
- 2009
- ECCN Code :
- EAR99
- Height :
- 1.1mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MMBTA06
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA06-7-F Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
MMBTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBTA06-7-F Applications
There are a lot of Diodes Incorporated
MMBTA06-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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