MMBTA05LT1G
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- Mfr.Part #
- MMBTA05LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 7,554
- In Stock ：
- 7,554
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Height :
- 1.11mm
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Terminal Form :
- Gull wing
- Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 250mV
- Length :
- 3.04mm
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- hFE Min :
- 100
- Surface Mount :
- yes
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Current Rating :
- 96.1A
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 60V
- Base Part Number :
- MMBTA05
- Collector Base Voltage (VCBO) :
- 60V
- Width :
- 2.64mm
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 225mW
- Published :
- 2005
- Contact Plating :
- Tin
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage - Rated DC :
- 60V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Power - Max :
- 225mW
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Datasheets
- MMBTA05LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 96.1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor
MMBTA05LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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