MMBTA05LT1
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- Mfr.Part #
- MMBTA05LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS DRIVER SS NPN 60V SOT23
- Stock
- 1,175
- In Stock ：
- 1,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 96.1A
- Collector Emitter Voltage (VCEO) :
- 60V
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 225mW
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Published :
- 2005
- Pin Count :
- 3
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 4V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Width :
- 2.64mm
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Length :
- 3.04mm
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Power - Max :
- 225mW
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- MMBTA05
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Height :
- 1.11mm
- hFE Min :
- 100
- Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 250mV
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- REACH SVHC :
- No SVHC
- Datasheets
- MMBTA05LT1
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 96.1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor
MMBTA05LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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