MMBTA05LT1
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- Mfr.Part #
- MMBTA05LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS DRIVER SS NPN 60V SOT23
- Stock
- 1,175
- In Stock ：
- 1,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Height :
- 1.11mm
- Power - Max :
- 225mW
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Current Rating :
- 96.1A
- Collector Emitter Voltage (VCEO) :
- 60V
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- 60V
- Max Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Type :
- NPN
- Base Part Number :
- MMBTA05
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 300mW
- Transition Frequency :
- 100MHz
- hFE Min :
- 100
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Length :
- 3.04mm
- Collector Emitter Breakdown Voltage :
- 60V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 225mW
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Published :
- 2005
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 2.64mm
- Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 4V
- Datasheets
- MMBTA05LT1
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 96.1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MMBTA05LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 96.1A
a transition frequency of 100MHz
MMBTA05LT1G Applications
There are a lot of ON Semiconductor
MMBTA05LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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