MMBTA05
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- Mfr.Part #
- MMBTA05
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A SOT23-3
- Stock
- 33,593
- In Stock ：
- 33,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- hFE Min :
- 100
- Max Power Dissipation :
- 350mW
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 30mg
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 250mV
- Factory Lead Time :
- 6 Weeks
- Frequency - Transition :
- 100MHz
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Published :
- 2002
- Power - Max :
- 350mW
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Base Part Number :
- MMBTA05
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Min Operating Temperature :
- -55°C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Current - Collector (Ic) (Max) :
- 500mA
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 500mA
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 350mW
- Emitter Base Voltage (VEBO) :
- 4V
- Voltage - Rated DC :
- 60V
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Height :
- 930μm
- Mounting Type :
- Surface Mount
- Frequency :
- 100MHz
- Width :
- 1.3mm
- Supplier Device Package :
- SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- MMBTA05
NPN -55°C~150°C TJ 100nA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBTA05 Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.As a result, it can handle voltages as low as 60V volts.Single BJT transistor comes in a supplier device package of SOT-23-3.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.The maximum collector current is 500mA volts.
MMBTA05 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of SOT-23-3
MMBTA05 Applications
There are a lot of ON Semiconductor
MMBTA05 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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