MMBT8099LT1G
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- Mfr.Part #
- MMBT8099LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 1,794
- In Stock ：
- 1,794
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 150MHz
- Max Power Dissipation :
- 225mW
- Collector Emitter Voltage (VCEO) :
- 80V
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Width :
- 1.4mm
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 3
- Current Rating :
- 500mA
- hFE Min :
- 100
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Base Part Number :
- MMBT8099
- Collector Emitter Saturation Voltage :
- 400mV
- Max Breakdown Voltage :
- 80V
- Power Dissipation :
- 225mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Number of Elements :
- 1
- Element Configuration :
- Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 80V
- Lead Free :
- Lead Free
- Length :
- 3.04mm
- Frequency :
- 150MHz
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 2 Weeks
- Height :
- 1.01mm
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT8099LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT8099LT1G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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