MMBT8099LT1G
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- Mfr.Part #
- MMBT8099LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 1,794
- In Stock ：
- 1,794
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 150MHz
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Max Power Dissipation :
- 225mW
- REACH SVHC :
- No SVHC
- Current Rating :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Pin Count :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 400mV
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Power Dissipation :
- 225mW
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Factory Lead Time :
- 2 Weeks
- Base Part Number :
- MMBT8099
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 500mA
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Height :
- 1.01mm
- Terminal Form :
- Gull wing
- Published :
- 2006
- Length :
- 3.04mm
- Weight :
- 4.535924g
- Transition Frequency :
- 150MHz
- Width :
- 1.4mm
- hFE Min :
- 100
- Datasheets
- MMBT8099LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT8099LT1G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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