MMBT8099LT1
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- Mfr.Part #
- MMBT8099LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SOT23-3
- Stock
- 61,585
- In Stock ：
- 61,585
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 400mV
- Pbfree Code :
- yes
- Power Dissipation :
- 225mW
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Max Collector Current :
- 500mA
- Published :
- 2006
- Terminal Position :
- Dual
- Base Part Number :
- MMBT8099
- Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Current Rating :
- 500mA
- ECCN Code :
- EAR99
- Length :
- 3.04mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Height :
- 1.01mm
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Transition Frequency :
- 150MHz
- Transistor Type :
- NPN
- Datasheets
- MMBT8099LT1
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT8099LT1G Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
MMBT8099LT1G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MMBT8099LT1G Applications
There are a lot of ON Semiconductor
MMBT8099LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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