MMBT6589T1G

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Mfr.Part #
MMBT6589T1G
Manufacturer
onsemi
Package / Case
SOT-23-6
Datasheet
Download
Description
TRANS PNP 30V 1A 6TSOP
Stock
52,592
In Stock :
52,592

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Reel (TR)
Configuration :
Single
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Number of Terminations :
6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
SOT-23-6
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Power - Max :
540mW
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Current - Collector (Ic) (Max) :
1A
Qualification Status :
COMMERCIAL
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
650mV @ 200mA, 2A
Surface Mount :
yes
Transition Frequency :
100MHz
Current - Collector Cutoff (Max) :
100nA
Voltage - Collector Emitter Breakdown (Max) :
30V
Transistor Type :
PNP
Reach Compliance Code :
Unknown
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA 2V
JESD-30 Code :
R-PDSO-G6
Terminal Position :
Dual
Pin Count :
6
Terminal Finish :
MATTE TIN
Number of Elements :
1
Frequency - Transition :
100MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
MMBT6589T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT6589T1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Package / Case:SOT-23-6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, MMBT6589T1G pinout, MMBT6589T1G datasheet PDF, MMBT6589T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT6589T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT6589T1G


PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount

MMBT6589T1G Overview


In this device, the DC current gain is 100 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 200mA, 2A.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 30V.

MMBT6589T1G Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 650mV @ 200mA, 2A
a transition frequency of 100MHz


MMBT6589T1G Applications


There are a lot of Rochester Electronics, LLC
MMBT6589T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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