MMBT6520LT3
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- Mfr.Part #
- MMBT6520LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 31,886
- In Stock ：
- 31,886
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Transistor Type :
- PNP
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- -1V
- HTS Code :
- 8541.21.00.95
- Max Power Dissipation :
- 225mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 40MHz
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 1V
- Voltage - Rated DC :
- -350V
- Collector Emitter Breakdown Voltage :
- 350V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 500mA
- hFE Min :
- 20
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Current Rating :
- -500mA
- Surface Mount :
- yes
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -350V
- Gain Bandwidth Product :
- 200MHz
- Base Part Number :
- MMBT6520
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- 240
- Datasheets
- MMBT6520LT3
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6520LT3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 500mA volts.
MMBT6520LT3 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT3 Applications
There are a lot of ON Semiconductor
MMBT6520LT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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