MMBT6520LT1G
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- Mfr.Part #
- MMBT6520LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 7,932
- In Stock ：
- 7,932
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Packaging :
- Cut Tape (CT)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 40MHz
- Max Collector Current :
- 500mA
- Factory Lead Time :
- 8 Weeks
- Transistor Element Material :
- SILICON
- Power - Max :
- 225mW
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 350V
- Length :
- 3.04mm
- Base Part Number :
- MMBT6520
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Radiation Hardening :
- No
- Published :
- 2004
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -1V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -350V
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Terminal Form :
- Gull wing
- Height :
- 1.11mm
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 20
- Current Rating :
- -500mA
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 200MHz
- Max Power Dissipation :
- 225mW
- Max Breakdown Voltage :
- 350V
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 350V
- Width :
- 2.64mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Power Dissipation :
- 300mW
- Datasheets
- MMBT6520LT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBT6520LT1G Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6520LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT1G Applications
There are a lot of ON Semiconductor
MMBT6520LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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