MMBT6520LT1G
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- Mfr.Part #
- MMBT6520LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 7,932
- In Stock ：
- 7,932
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- hFE Min :
- 20
- Packaging :
- Cut Tape (CT)
- Voltage - Rated DC :
- -350V
- Max Breakdown Voltage :
- 350V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 350V
- Collector Emitter Voltage (VCEO) :
- 350V
- Power - Max :
- 225mW
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Base Part Number :
- MMBT6520
- Transistor Element Material :
- SILICON
- Frequency :
- 200MHz
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Width :
- 2.64mm
- Transition Frequency :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 3.04mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 225mW
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 350V
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Collector Emitter Saturation Voltage :
- -1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 8 Weeks
- Gain Bandwidth Product :
- 200MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Transistor Type :
- PNP
- Current Rating :
- -500mA
- Published :
- 2004
- Lead Free :
- Lead Free
- Height :
- 1.11mm
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Datasheets
- MMBT6520LT1G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
MMBT6520LT1G Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Input voltage breakdown is available at 350V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6520LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT1G Applications
There are a lot of ON Semiconductor
MMBT6520LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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