MMBT6517LT3G
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- Mfr.Part #
- MMBT6517LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.1A SOT23-3
- Stock
- 29,196
- In Stock ：
- 29,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 350V
- Power Dissipation :
- 300mW
- Collector Emitter Saturation Voltage :
- 1V
- Pin Count :
- 3
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 350V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Power - Max :
- 225mW
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Gain Bandwidth Product :
- 200MHz
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 225mW
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 350V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 7 hours ago)
- Frequency :
- 200MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Current Rating :
- 500mA
- Base Part Number :
- MMBT6517
- Published :
- 2005
- Voltage - Rated DC :
- 350V
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 40MHz
- hFE Min :
- 20
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MMBT6517LT3G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6517LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
MMBT6517LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3G Applications
There are a lot of ON Semiconductor
MMBT6517LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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