MMBT6517LT3G
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- Mfr.Part #
- MMBT6517LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.1A SOT23-3
- Stock
- 29,196
- In Stock ：
- 29,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 7 hours ago)
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Published :
- 2005
- Frequency :
- 200MHz
- Collector Emitter Voltage (VCEO) :
- 350V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 350V
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Terminal Form :
- Gull wing
- Power - Max :
- 225mW
- Number of Pins :
- 3
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 20
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- MMBT6517
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 350V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 350V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transition Frequency :
- 40MHz
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 225mW
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Datasheets
- MMBT6517LT3G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6517LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 40MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
MMBT6517LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3G Applications
There are a lot of ON Semiconductor
MMBT6517LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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