MMBT6428
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- Mfr.Part #
- MMBT6428
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SOT23-3
- Stock
- 25,001
- In Stock ：
- 25,001
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Length :
- 2.9mm
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMBT6428
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Current - Collector Cutoff (Max) :
- 100nA
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 50V
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Frequency :
- 700MHz
- Power Dissipation :
- 350mW
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 50V
- Element Configuration :
- Single
- Width :
- 1.3mm
- Mount :
- Surface Mount
- Height :
- 930μm
- Collector Emitter Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 700MHz
- Published :
- 2002
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- 600mV
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 350mW
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 250
- Datasheets
- MMBT6428
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6428 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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