MMBT6428
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- Mfr.Part #
- MMBT6428
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SOT23-3
- Stock
- 25,001
- In Stock ：
- 25,001
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 30mg
- Current Rating :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage - Rated DC :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 930μm
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 700MHz
- Max Power Dissipation :
- 350mW
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Element Configuration :
- Single
- Termination :
- SMD/SMT
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Power Dissipation :
- 350mW
- hFE Min :
- 250
- Length :
- 2.9mm
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Frequency :
- 700MHz
- Published :
- 2002
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 600mV
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Base Part Number :
- MMBT6428
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Width :
- 1.3mm
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Datasheets
- MMBT6428
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6428 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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