MMBT6428
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- Mfr.Part #
- MMBT6428
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A SOT23-3
- Stock
- 25,001
- In Stock ：
- 25,001
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Base Part Number :
- MMBT6428
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 700MHz
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 350mW
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2002
- Frequency :
- 700MHz
- Termination :
- SMD/SMT
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 50V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Voltage - Rated DC :
- 50V
- Weight :
- 30mg
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Current Rating :
- 500mA
- Power Dissipation :
- 350mW
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- hFE Min :
- 250
- Length :
- 2.9mm
- Height :
- 930μm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Width :
- 1.3mm
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBT6428
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6428 Overview
In this device, the DC current gain is 250 @ 100μA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MMBT6428 Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMBT6428 Applications
There are a lot of ON Semiconductor
MMBT6428 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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