MMBT6427LT1

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Mfr.Part #
MMBT6427LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS SS DARL NPN 40V SOT23
Stock
3,894
In Stock :
3,894

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
10000
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Base Part Number :
MMBT6427
Number of Terminations :
3
Continuous Collector Current :
500mA
Published :
2006
Transistor Element Material :
SILICON
Transistor Type :
NPN - Darlington
Element Configuration :
Single
Polarity :
NPN
Power Dissipation :
225mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Lead Free :
Lead Free
Factory Lead Time :
10 Weeks
Current - Collector Cutoff (Max) :
1μA
Mounting Type :
Surface Mount
Number of Pins :
3
REACH SVHC :
No SVHC
Halogen Free :
Halogen Free
Voltage - Rated DC :
40V
Contact Plating :
Tin
Collector Emitter Voltage (VCEO) :
40V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Pbfree Code :
yes
Length :
3.04mm
Surface Mount :
yes
Current Rating :
600mA
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 500μA, 500mA
Max Breakdown Voltage :
40V
Termination :
SMD/SMT
Collector Base Voltage (VCBO) :
40V
Max Collector Current :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Terminal Form :
Gull wing
Pin Count :
3
Transition Frequency :
130MHz
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
12V
Collector Emitter Saturation Voltage :
1.2V
Height :
1.01mm
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
225mW
Width :
1.4mm
Weight :
4.535924g
Number of Elements :
1
Collector Emitter Breakdown Voltage :
40V
Datasheets
MMBT6427LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT6427LT1 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBT6427, Number of Terminations:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, MMBT6427LT1 pinout, MMBT6427LT1 datasheet PDF, MMBT6427LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT6427LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT6427LT1


NPN - Darlington -55°C~150°C TJ 1μA 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT6427LT1G Overview


This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.5V @ 500μA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 130MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 500mA volts is possible.

MMBT6427LT1G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 600mA
a transition frequency of 130MHz


MMBT6427LT1G Applications


There are a lot of ON Semiconductor
MMBT6427LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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