MMBT6427
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- Mfr.Part #
- MMBT6427
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 1.2A SOT23-3
- Stock
- 5,501
- In Stock ：
- 5,501
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 23 hours ago)
- Length :
- 2.92mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 500μA, 500mA
- Base Part Number :
- MMBT6427
- Polarity :
- NPN
- Current Rating :
- 1.2A
- Packaging :
- Tape and Reel (TR)
- Published :
- 2016
- Number of Pins :
- 3
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Weight :
- 30mg
- Voltage - Rated DC :
- 40V
- Collector Emitter Saturation Voltage :
- 1.2V
- Power - Max :
- 350mW
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 1.2A
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14000 @ 500mA 5V
- Max Collector Current :
- 1.2A
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Max Power Dissipation :
- 350mW
- Height :
- 930μm
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA
- Contact Plating :
- Tin
- Max Operating Temperature :
- 150°C
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- hFE Min :
- 20000
- Factory Lead Time :
- 39 Weeks
- Max Breakdown Voltage :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 12V
- Power Dissipation :
- 350mW
- Mount :
- Surface Mount
- Datasheets
- MMBT6427
NPN - Darlington -55°C~150°C TJ 1μA 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT6427 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 14000 @ 500mA 5V.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 500μA, 500mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.2A.There is a breakdown input voltage of 40V volts that it can take.The product comes in the supplier device package of SOT-23-3 (TO-236).A 40V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1.2A volts at its maximum.
MMBT6427 Features
the DC current gain for this device is 14000 @ 500mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
the supplier device package of SOT-23-3 (TO-236)
MMBT6427 Applications
There are a lot of ON Semiconductor
MMBT6427 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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