MMBT5962
- Mfr.Part #
- MMBT5962
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 19,946
- In Stock :
- 19,946
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Length :
- 2.9mm
- Current - Collector Cutoff (Max) :
- 2nA ICBO
- hFE Min :
- 600
- Factory Lead Time :
- 39 Weeks
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- 200mV
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Application :
- AMPLIFIER
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 930μm
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 600 @ 10mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Contact Plating :
- Tin
- Current Rating :
- 100mA
- Max Collector Current :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 350mW
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Published :
- 1997
- Emitter Base Voltage (VEBO) :
- 8V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Power Dissipation :
- 350mW
- Transition Frequency :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- MMBT5962
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- MMBT5962
NPN -55°C~150°C TJ 2nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5962 PNP Amplifier Description
Because the MMBT5962 is an NPN transistor, the collector and emitter are open (reverse biased) while the base pin is maintained at the ground and closed (forward-biased) when a signal is applied to the base pin. MMBT5962 has a gain value of 900 (usually), with a maximum of 1200. This number influences the amplification capacity, which with this transistor is quite high.
MMBT5962 PNP Amplifier Features
-
Higher gain value
-
Low noise
-
Pb free device
-
Low current (max. 100nA)
-
Low voltage (max. 30V)
-
Collector-Emitter Voltage: 30 Vdc
-
Collector-Base Voltage: 35 Vdc
-
Emitter-Base Voltage: 3.0 Vdc
-
DC current gain: 1200 hFe (max.)
-
Operating and Junction Temperature: –55 to +150 °C
MMBT5962 PNP Amplifier Applications
-
Low Noise Audio Amplifications
-
High Gain Studios
-
Switches
-
Darlington Pairs
-
Optical Fiber Communications
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