MMBT5551-TP
- Mfr.Part #
- MMBT5551-TP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23
- Stock
- 5,290
- In Stock :
- 5,290
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 12 Weeks
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Base Part Number :
- MMBT5551
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 600mA
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power Dissipation-Max (Abs) :
- 0.3W
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Frequency - Transition :
- 100MHz
- JESD-30 Code :
- R-PDSO-G3
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Published :
- 2005
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Power - Max :
- 300mW
- Datasheets
- MMBT5551-TP

NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5551-TP Overview
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 5mA, 50mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 160V.
MMBT5551-TP Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5551-TP Applications
There are a lot of Micro Commercial Co
MMBT5551-TP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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