MMBT5551
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- Mfr.Part #
- MMBT5551
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.6A SOT23-3
- Stock
- 180,000
- In Stock ：
- 180,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector (Ic) (Max) :
- 600mA
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Power - Max :
- 350mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PDSO-G3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Terminal Finish :
- MATTE TIN
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 5mA, 50mA
- Datasheets
- MMBT5551
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5551 Overview
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.
MMBT5551 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 100MHz
MMBT5551 Applications
There are a lot of Rochester Electronics, LLC
MMBT5551 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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