MMBT5550LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Height :

1.01mm

hFE Min :

60

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Contact Plating :

Tin

Pin Count :

3

Max Power Dissipation :

225mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

160V

Published :

1998

Mounting Type :

Surface Mount

Power Dissipation :

225mW

Surface Mount :

yes

Current Rating :

600mA

Transistor Type :

NPN

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

VCEsat-Max :

0.25 V

Max Breakdown Voltage :

140V

Collector Emitter Saturation Voltage :

150mV

Factory Lead Time :

4 Weeks

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Base Part Number :

MMBT5550

Weight :

4.535924g

Number of Pins :

3

Transistor Application :

SWITCHING

Type :

GENERAL PURPOSE

Emitter Base Voltage (VEBO) :

6V

Lead Free :

Lead Free

JESD-609 Code :

e3

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Current - Collector Cutoff (Max) :

100nA

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

140V

Width :

1.4mm

Number of Elements :

1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

3.04mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

140V

Voltage - Rated DC :

140V

Terminal Form :

Gull wing

Element Configuration :

Single

Max Collector Current :

600mA