MMBT5401LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Weight :

4.535924g

Gain Bandwidth Product :

300MHz

Terminal Form :

Gull wing

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Terminal Position :

Dual

Max Collector Current :

500mA

JESD-609 Code :

e3

Transistor Type :

PNP

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

-500mV

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

160V

Base Part Number :

MMBT5401

Number of Elements :

1

Mounting Type :

Surface Mount

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

300mW

Length :

2.9mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

150V

Max Breakdown Voltage :

150V

Voltage - Rated DC :

-150V

Published :

2005

Current Rating :

-500mA

Operating Temperature :

-55°C~150°C TJ

hFE Min :

50

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Frequency :

300MHz

Height :

940μm

Transition Frequency :

100MHz

ECCN Code :

EAR99

Width :

1.3mm

Pin Count :

3

Collector Emitter Breakdown Voltage :

-150V

Current - Collector Cutoff (Max) :

50nA ICBO

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)