MMBT5401LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Contact Plating :

Tin

Gain Bandwidth Product :

300MHz

Collector Emitter Voltage (VCEO) :

150V

Published :

2005

Collector Emitter Saturation Voltage :

-500mV

Element Configuration :

Single

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

100MHz

Max Collector Current :

500mA

Height :

940μm

Number of Terminations :

3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Max Breakdown Voltage :

150V

Polarity/Channel Type :

PNP

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

50nA ICBO

Radiation Hardening :

No

Current Rating :

-500mA

hFE Min :

50

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Pin Count :

3

Number of Elements :

1

Power Dissipation :

300mW

Factory Lead Time :

4 Weeks

Number of Pins :

3

ECCN Code :

EAR99

Frequency :

300MHz

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

300mW

Transistor Type :

PNP

Length :

2.9mm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Weight :

4.535924g

Width :

1.3mm

Pbfree Code :

yes

Voltage - Rated DC :

-150V

JESD-609 Code :

e3

Base Part Number :

MMBT5401

Collector Emitter Breakdown Voltage :

-150V

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

160V

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)