MMBT5401
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- Mfr.Part #
- MMBT5401
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.6A SOT23-3
- Stock
- 11,640
- In Stock ：
- 11,640
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 10 Weeks
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 5V
- Frequency - Transition :
- 100MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Published :
- 2011
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Power - Max :
- 300mW
- Max Collector Current :
- 600mA
- Number of Elements :
- 1
- Weight :
- 200.998119mg
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- hFE Min :
- 80
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Collector Current :
- -600mA
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 150V
- JESD-30 Code :
- R-PDSO-G3
- Datasheets
- MMBT5401
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5401-G Overview
This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -600mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.
MMBT5401-G Features
the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
MMBT5401-G Applications
There are a lot of Comchip Technology
MMBT5401-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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