MMBT5210
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- Mfr.Part #
- MMBT5210
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT23-3
- Stock
- 2,023
- In Stock ：
- 2,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- MMBT5210
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Voltage (VCEO) :
- 50V
- Length :
- 2.9mm
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 50V
- Max Breakdown Voltage :
- 50V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 30MHz
- Transistor Element Material :
- SILICON
- Frequency :
- 30MHz
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Factory Lead Time :
- 7 Weeks
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Published :
- 2002
- Power Dissipation :
- 350mW
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Width :
- 1.3mm
- Max Power Dissipation :
- 350mW
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Height :
- 930μm
- Transition Frequency :
- 30MHz
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 200
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- MMBT5210
MMBT5210 Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5210 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MMBT5210 Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 500mA
a transition frequency of 30MHz
MMBT5210 Applications
There are a lot of ON Semiconductor
MMBT5210 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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