MMBT5210
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- Mfr.Part #
- MMBT5210
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SOT23-3
- Stock
- 2,023
- In Stock ：
- 2,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- Height :
- 930μm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 30MHz
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBT5210
- Transition Frequency :
- 30MHz
- Published :
- 2002
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Power Dissipation :
- 350mW
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Voltage - Rated DC :
- 50V
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Factory Lead Time :
- 7 Weeks
- Current Rating :
- 500mA
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- Dual
- Max Power Dissipation :
- 350mW
- RoHS Status :
- RoHS Compliant
- Width :
- 1.3mm
- Collector Emitter Breakdown Voltage :
- 50V
- hFE Min :
- 200
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100μA 5V
- Gain Bandwidth Product :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 4.5V
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 1mA, 10mA
- Polarity/Channel Type :
- NPN
- Datasheets
- MMBT5210
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5210 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100μA 5V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4.5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 30MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
MMBT5210 Features
the DC current gain for this device is 200 @ 100μA 5V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 500mA
a transition frequency of 30MHz
MMBT5210 Applications
There are a lot of ON Semiconductor
MMBT5210 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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