MMBT5089LT1G
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- Mfr.Part #
- MMBT5089LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A SOT23-3
- Stock
- 1,023
- In Stock ：
- 1,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- hFE Min :
- 400
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 4.535924g
- Height :
- 1.11mm
- Frequency :
- 50MHz
- Length :
- 3.04mm
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 25V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Gain Bandwidth Product :
- 50MHz
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 225mW
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 25V
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Base Part Number :
- MMBT5089
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 1997
- Power - Max :
- 300mW
- Current Rating :
- 50mA
- Max Collector Current :
- 50mA
- Factory Lead Time :
- 9 Weeks
- Transition Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Power Dissipation :
- 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Emitter Base Voltage (VEBO) :
- 4.5V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Width :
- 2.64mm
- Collector Emitter Breakdown Voltage :
- 25V
- Datasheets
- MMBT5089LT1G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5089LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5089LT1G Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5089LT1G Applications
There are a lot of ON Semiconductor
MMBT5089LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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