MMBT5089LT1G
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- Mfr.Part #
- MMBT5089LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A SOT23-3
- Stock
- 1,023
- In Stock ：
- 1,023
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 25V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Base Voltage (VCBO) :
- 30V
- Surface Mount :
- yes
- Number of Elements :
- 1
- Factory Lead Time :
- 9 Weeks
- ECCN Code :
- EAR99
- Published :
- 1997
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 25V
- Transistor Type :
- NPN
- hFE Min :
- 400
- Max Collector Current :
- 50mA
- Mounting Type :
- Surface Mount
- Length :
- 3.04mm
- Max Power Dissipation :
- 225mW
- Width :
- 2.64mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Height :
- 1.11mm
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 3
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 4.5V
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Power - Max :
- 300mW
- Transition Frequency :
- 50MHz
- Base Part Number :
- MMBT5089
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 225mW
- Frequency :
- 50MHz
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 25V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Current Rating :
- 50mA
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Datasheets
- MMBT5089LT1G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5089LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5089LT1G Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5089LT1G Applications
There are a lot of ON Semiconductor
MMBT5089LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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