MMBT5089LT1
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- Mfr.Part #
- MMBT5089LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 50MA SOT23
- Stock
- 12,775
- In Stock ：
- 12,775
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 50mA
- Collector Base Voltage (VCBO) :
- 30V
- Power - Max :
- 300mW
- Collector Emitter Breakdown Voltage :
- 25V
- Height :
- 1.11mm
- hFE Min :
- 400
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Factory Lead Time :
- 9 Weeks
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Mounting Type :
- Surface Mount
- Published :
- 1997
- Base Part Number :
- MMBT5089
- Max Breakdown Voltage :
- 25V
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 225mW
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 4.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 400 @ 100μA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Length :
- 3.04mm
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Power Dissipation :
- 225mW
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- Current Rating :
- 50mA
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Voltage - Rated DC :
- 25V
- Width :
- 2.64mm
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 25V
- Datasheets
- MMBT5089LT1
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5089LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 100μA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 1mA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4.5V.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 50mA volts.
MMBT5089LT1G Features
the DC current gain for this device is 400 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5089LT1G Applications
There are a lot of ON Semiconductor
MMBT5089LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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