MMBT5088LT1G
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- Mfr.Part #
- MMBT5088LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.05A SOT23-3
- Stock
- 3,651
- In Stock ：
- 3,651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100μA 5V
- Height :
- 1.01mm
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 300
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Power Dissipation :
- 300mW
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- Length :
- 3.04mm
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 35V
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Surface Mount :
- yes
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Max Collector Current :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency :
- 50MHz
- Base Part Number :
- MMBT5088
- Current Rating :
- 50mA
- Published :
- 2005
- Transition Frequency :
- 50MHz
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Datasheets
- MMBT5088LT1G
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5088LT1G Overview
This device has a DC current gain of 300 @ 100μA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.This device has a current rating of 50mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 50mA volts is possible.
MMBT5088LT1G Features
the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5088LT1G Applications
There are a lot of ON Semiconductor
MMBT5088LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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