MMBT5087LT3G
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- Mfr.Part #
- MMBT5087LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.05A SOT23-3
- Stock
- 115,778
- In Stock ：
- 115,778
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 40MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Power Dissipation :
- 300mW
- Base Part Number :
- MMBT5087
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- LOW NOISE
- Voltage - Rated DC :
- -50V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Current Rating :
- -50mA
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 40MHz
- Max Power Dissipation :
- 300mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100μA 5V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Pin Count :
- 3
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Polarity/Channel Type :
- PNP
- hFE Min :
- 250
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Frequency :
- 40MHz
- Emitter Base Voltage (VEBO) :
- 3V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -300mV
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Position :
- Dual
- Datasheets
- MMBT5087LT3G
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT5087LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100μA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 10mA.If the emitter base voltage is kept at 3V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -50mA.A transition frequency of 40MHz is present in the part.Collector current can be as low as 50mA volts at its maximum.
MMBT5087LT3G Features
the DC current gain for this device is 250 @ 100μA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is -50mA
a transition frequency of 40MHz
MMBT5087LT3G Applications
There are a lot of ON Semiconductor
MMBT5087LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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