MMBT489LT1G
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- Mfr.Part #
- MMBT489LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A SOT23-3
- Stock
- 3,187
- In Stock ：
- 3,187
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 30V
- hFE Min :
- 300
- Pin Count :
- 3
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Current Rating :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 310mW
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 100mA, 1A
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Width :
- 2.64mm
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MMBT489
- Height :
- 1.11mm
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Length :
- 3.04mm
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 710mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 1A
- Collector Emitter Saturation Voltage :
- 200mV
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 5V
- Halogen Free :
- Halogen Free
- Polarity/Channel Type :
- NPN
- Published :
- 2005
- Datasheets
- MMBT489LT1G
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT489LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 500mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 1A volts.
MMBT489LT1G Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
MMBT489LT1G Applications
There are a lot of ON Semiconductor
MMBT489LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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