MMBT489LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Rated DC :

30V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

30V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 500mA 5V

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Published :

2005

Pbfree Code :

yes

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Max Power Dissipation :

310mW

Lead Free :

Lead Free

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

50V

Transition Frequency :

100MHz

Collector Emitter Breakdown Voltage :

30V

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Height :

1.11mm

Width :

2.64mm

Base Part Number :

MMBT489

Mounting Type :

Surface Mount

Max Breakdown Voltage :

30V

Terminal Position :

Dual

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

Length :

3.04mm

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

200mV

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation :

710mW

Transistor Type :

NPN

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

300

Current Rating :

2A

Frequency :

100MHz

Transistor Element Material :

SILICON

Pin Count :

3

Max Collector Current :

1A

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ