MMBT4403WT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2005

Collector Emitter Voltage (VCEO) :

40V

JESD-609 Code :

e3

Turn Off Time-Max (toff) :

255ns

Number of Terminations :

3

Element Configuration :

Single

Polarity/Channel Type :

PNP

Time@Peak Reflow Temperature-Max (s) :

40

Collector Base Voltage (VCBO) :

40V

Number of Elements :

1

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

150mW

Number of Pins :

3

Mounting Type :

Surface Mount

Base Part Number :

MMBT4403

Gain Bandwidth Product :

200MHz

Terminal Form :

Gull wing

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Surface Mount :

yes

Voltage - Rated DC :

-40V

Transistor Element Material :

SILICON

hFE Min :

30

Package / Case :

SC-70, SOT-323

Terminal Position :

Dual

Frequency :

200MHz

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP

Collector Emitter Saturation Voltage :

-750mV

Max Breakdown Voltage :

40V

Transition Frequency :

200MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

40V

Transistor Application :

SWITCHING

Contact Plating :

Tin

Lead Free :

Lead Free

Max Collector Current :

600mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Max Power Dissipation :

150mW

Emitter Base Voltage (VEBO) :

5V

Current Rating :

-600mA

Pin Count :

3