MMBT4403M3T5G
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- Mfr.Part #
- MMBT4403M3T5G
- Manufacturer
- onsemi
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A SOT723
- Stock
- 36,188
- In Stock ：
- 36,188
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 640mW
- Number of Elements :
- 1
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Published :
- 2009
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Power Dissipation :
- 640mW
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Transition Frequency :
- 200MHz
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 40V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Power - Max :
- 265mW
- Frequency :
- 200MHz
- Base Part Number :
- MMBT4403
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Package / Case :
- SOT-723
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 600mA
- Gain Bandwidth Product :
- 200MHz
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Datasheets
- MMBT4403M3T5G
PNP -55°C~150°C TJ 1 Elements PNP SOT-723 Tape & Reel (TR) Surface Mount
MMBT4403M3T5G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.
MMBT4403M3T5G Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
MMBT4403M3T5G Applications
There are a lot of ON Semiconductor
MMBT4403M3T5G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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