MMBT4403M3T5G

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Mfr.Part #
MMBT4403M3T5G
Manufacturer
onsemi
Package / Case
SOT-723
Datasheet
Download
Description
TRANS PNP 40V 0.6A SOT723
Stock
36,188
In Stock :
36,188

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Surface Mount :
yes
Published :
2009
Base Part Number :
MMBT4403
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Frequency :
200MHz
Pbfree Code :
yes
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
JESD-609 Code :
e3
Factory Lead Time :
2 Weeks
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
640mW
Max Collector Current :
600mA
Transition Frequency :
200MHz
Polarity/Channel Type :
PNP
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
40V
Power Dissipation :
640mW
Gain Bandwidth Product :
200MHz
Collector Emitter Voltage (VCEO) :
40V
Transistor Type :
PNP
Pin Count :
3
Power - Max :
265mW
Package / Case :
SOT-723
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
40V
Mounting Type :
Surface Mount
Datasheets
MMBT4403M3T5G
Introducing Transistors - Bipolar (BJT) - Single onsemi MMBT4403M3T5G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MMBT4403, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:SOT-723, Mounting Type:Surface Mount, MMBT4403M3T5G pinout, MMBT4403M3T5G datasheet PDF, MMBT4403M3T5G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT4403M3T5G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMBT4403M3T5G


PNP -55°C~150°C TJ 1 Elements PNP SOT-723 Tape & Reel (TR) Surface Mount

MMBT4403M3T5G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 200MHz.A maximum collector current of 600mA volts can be achieved.

MMBT4403M3T5G Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


MMBT4403M3T5G Applications


There are a lot of ON Semiconductor
MMBT4403M3T5G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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