MMBT4403LT3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

300mW

Max Power Dissipation :

225mW

Element Configuration :

Single

Factory Lead Time :

10 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Current Rating :

600mA

Frequency :

200MHz

Max Breakdown Voltage :

40V

Base Part Number :

MMBT4403

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

40V

Height :

1.11mm

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

40V

hFE Min :

30

Max Collector Current :

600mA

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Published :

2007

Transition Frequency :

200MHz

Terminal Position :

Dual

JESD-609 Code :

e3

Radiation Hardening :

No

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Width :

2.64mm

REACH SVHC :

No SVHC

Voltage - Rated DC :

-40V

Gain Bandwidth Product :

200MHz

Length :

3.04mm

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Collector-Base Capacitance-Max :

8.5pF

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Collector Emitter Saturation Voltage :

-750mV

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Pin Count :

3

Number of Pins :

3

Terminal Form :

Gull wing

Turn Off Time-Max (toff) :

255ns

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

40V