MMBT4403LT3G
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- Mfr.Part #
- MMBT4403LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.6A SOT23-3
- Stock
- 67,986
- In Stock ：
- 67,986
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.11mm
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -40V
- Max Power Dissipation :
- 225mW
- Turn Off Time-Max (toff) :
- 255ns
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Pin Count :
- 3
- Radiation Hardening :
- No
- Current Rating :
- 600mA
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 40V
- Base Part Number :
- MMBT4403
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Transition Frequency :
- 200MHz
- hFE Min :
- 30
- Collector Emitter Saturation Voltage :
- -750mV
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Weight :
- 4.535924g
- Width :
- 2.64mm
- Gain Bandwidth Product :
- 200MHz
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 600mA
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Frequency :
- 200MHz
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Collector-Base Capacitance-Max :
- 8.5pF
- Collector Emitter Voltage (VCEO) :
- 40V
- Length :
- 3.04mm
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 10 Weeks
- Datasheets
- MMBT4403LT3G
PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4403LT3G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -750mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 600mA volts.
MMBT4403LT3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 200MHz
MMBT4403LT3G Applications
There are a lot of ON Semiconductor
MMBT4403LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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